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Generel CharacteristicsGenerel Characteristics: 
DesignerCompany which designed the semiconductor component Qualcomm
Type Snapdragon 855 SM8150
Codename Hana
Year Released 2019
FunctionMain function of the component  Multi-core Application Processor with Modem

ArchitectureArchitecture: 
Width of Machine WordMaximum bitwidth of ALU operands. Width of machine word can also be defined in different ways (register width, instruction width, etc.) in case of recent microprocessors. 64 bit
Supported Instruction Set(s) ARMv8-A (A32, A64)
Type of processor core(s)Type and allocation of processor core(s) 8x Qualcomm Kryo 485
Number of processor core(s) octa-core

BusesBuses: 
Memory Interface(s):   LPDDR4x SDRAM
Max. Clock Frequency of Memory IFClock frequency of fastest supported memory interface 2133 MHz
Data Bus WidthMaximum selectable bit width of primary data bus (RAM) of memory interface 16 bit
Number of data bus channels 4 ch
Max. Data RateMaximal throughput of the fastest supported memory interface in 1000 megabyte per seconds units. 34.13 Gbyte/s
Non-volatile Memory InterfaceInterface which determines physical layer towards the NV memory  eMMC 5.1Complies with embedded MMC 5.1 specification released in 2015 , UFS 2.1UFS revision 2.1 (released in 2016) defines single-lane 600 MB/s or dual-lane 1.2 GB/s NAND flash EEPROM interface , UFS 3.0UFS 3.0 (released in 2017) defines single-lane 1.45 GB/s or dual-lane 2.9 GB/s NAND flash EEPROM interface


Clock FrequenciesClock Frequencies: 
Recommended Maximum Clock Frequency 2842 MHz max.

Cache MemoriesCache Memories: 
L1 Instruction Cache per CoreCapacity of level 1 instruction cache per processor core 64 Kbyte I-Cache
L1 Data Cache per CoreCapacity of level 1 data cache per processor core 64 Kbyte D-Cache
Total L2 CacheCapacity of level 2 cache shared between processor core(s) 1792 Kbyte L2
Total L3 Cache 2048 Kbyte L3

Technology and PackagingTechnology and Packaging: 
Feature SizeThe minimum physical dimension in the integrated circuit which can be fabricated with the given semiconductor technology 7 nm
Semiconductor Technology:   CMOSComplementary Metal-oxide - Semiconductor Field Effect Transistor
Number of Transistors Integrated 6700000000
FabPlant which fabricates the semiconductor component TSMC

Graphical SubsystemGraphical Subsystem: 
Embedded GPUManufactuer (or IP designer) and type of embedded graphics coprocessor(s). Qualcomm Adreno 640 GPU
GPU Clock 585 MHz GPU
Dedicated Graphics MemoryDedicated operative memory (video RAM, VRAM) 1 MiB

Cellular CommunicationCellular Communication: 
Supported Cellular Data LinksList of supported cellular data links  CSDCircuit Switched Data (CSD) is the original data link protocol of GSM. Up to 9600bit/s download speed , GPRSGeneral Packet Radio Service , GPRS C12 , GPRS MSC12 , GPRS MSC33 , EDGEEnhanced Data Rates for GSM Evolution also known as Enhanced GPRS (EGPRS) , EDGE MSC10 , EDGE MSC12 , EDGE MSC32 , EDGE MSC33 , UMTSUniversal Mobile Telecommunications System. UMTS Release '99 data link layer, W-CDMA grants up to 384 kbit/s pocket-switched download speed. , HSUPAHigh-Speed Uplink Packet Access is a 3.5G UMTS uplink protocol. , HSUPA 1.4 , HSUPA 2.0 , HSUPA 5.8 , HSUPA 11.5 , HSDPAHigh-Speed Downlink Packet Access is a 3.5G UMTS downlink protocol. , HSDPA 1.8 , HSDPA 3.6 , HSDPA 7.2 , HSDPA 10.2 , HSDPA 14.4 , HSPA+ 21.1 , HSPA+ 28.8 , HSPA+ 42.2Single-carrier HSPA+ 42.2 Mbps , DC-HSDPA 42.2Dual-carrier HSPA+ 42.2 Mbps , cdmaOne , CDMA2000 1x , CDMA2000 1xEV-DO , CDMA2000 1xEV-DO Rev A , CDMA2000 1xEV-DO Rev B , TD-SCDMATime Division Synchronous Code Division Multiple Access is the implementation of UMTS  (3G) cellular network in China. , TD-HSDPA , LTELTE (Long Term Evolution) or the E-UTRAN (Evolved Universal Terrestrial Access Network), introduced in 3GPP R8, is the 4G access part of the Evolved Packet System (EPS). , LTE 50/25LTE 50.4 Mbps / 25.2 Mbps (Cat. 2) , LTE 75/25LTE 75.6 Mbps / 25.2 Mbps (Cat. 3) , LTE 100/50LTE 100.8 Mbps / 50.4 Mbps (Cat. 3) , LTE 150/50LTE 151.2 Mbps / 50.4 Mbps (Cat. 4) , LTE 225/50SK Telecom LTE-A , LTE 300/50More exact values: LTE 301.5 Mbps / 50.4 Mbps (Cat. 6) , LTE 300/75LTE 299.6 Mbps / 75.6 Mbps (Cat. 5) , LTE 300/100More exact values: LTE 301.5 Mbps / 100.8 Mbps (Cat. 7) , LTE 400/150LTE Category 13: 391.7 Mbps downlink, 150.8 Mbps uplink (rel. 12) , LTE 450/50LTE Category 9: 452.2 Mbps  downlink, 51 Mbps uplink , LTE 450/100LTE Category 10: 452.2 Mbps downlink, 102 Mbps uplink , LTE 600/100LTE Category 12: 603 Mbps downlink, 102 Mbps uplink (Rel. 11) , LTE 1000/100LTE Category 16: 979 Mbps downlink, 5 CA, 105 Mbps uplink , LTE 1200/200LTE Category 18: 1174 Mbps downlink, 6 CA, 211 Mbps uplink data links

Additional InformationAdditional Information: 
Special Features
SDM855, quad Qualcomm Kryo 485 Gold Harvard Superscalar cores (1x ARM Cortex-A76 up to 2842 MHz, 3x ARM Cortex-A76 up to 2419 MHz, 1280 Kbyte L2 cluster cache) + quad Qualcomm Kryo 485 Silver (4x ARM Cortex-A55 up to 1786.. ››

Datasheet AttributesDatasheet Attributes: 

Data IntegrityData integrity level determines the integrity of the published information. Final datasheets are not intended to be modified in the future, preliminary ones can be based on unofficial information or speculations, incomplete ones are also preliminary b  Final
AddedThe exact time of the datasheet addition 2018-11-15 15:51
 
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